SSFP1N60 starmos t power mosfet extremely high dv/dt capability low gate charge qg results in simple drive requirement 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing repeatability description starmos is a new generation of high voltage n?channel enhancement mode power mosfets. this new technology minimises the jfet effect, increases packing density and reduces the on-resistance. starmos also achieves faster switching speeds through optimised gate layout with planar stripe dmos technology. application switching application absolute maximum ratings parameter max. units i d @tc=25 ? c continuous drain current,v gs @10v 1.0 i d @tc=100 ? c continuous drain current,v gs @10v 0.6 i dm pulsed drain current 4 a p d @t c =25 ? c power dissipation 28 w linear derating factor 0.22 w/ ? c v gs gate-to-source voltage 30 v e as single pulse avalanche energy 33 mj i ar avalanche current 1.0 a e ar repetitive avalanche energy 2.8 mj dv/dt peak diode recovery dv/dt 4.5 v/ns t j t stg operating junction and storage temperature range C 55 to +175 soldering temperature, for 10 seconds 300(1.6mm from case) ? c mounting torque,6-32 or m3 screw 10 ibf in(1.1n m) thermal resistance parameter min. typ. max. units r jc junction-to-case 4.53 r cs case-to-sink,flat,greased surface 0.50 r ja junction-to-ambient 50 ? c/w pin1?gate pin2?drain pin1?source v dss = 600v i d25 = 1.0a r ds(on) = 11.5 1
SSFP1N60 starmos t power mosfet electrical characteristics @t j =25 ? c(unless otherwise specified) parameter min. typ. max. units test conditions v (br)dss drain-to-source breakdown voltage 600 v v gs =0v,i d = 250 a v (br)dss / t j breakdown voltage temp.coefficient 0.6 v/ ? c reference to 25 ? c,i d =250 a r ds(on) static drain-to-source on-resistance 9.3 11.5 v gs =10v,i d =0.5a v gs(th) gate threshold voltage 2.0 4.0 v v ds =v gs ,i d =250 a g fs forward transconductance 0.75 s v ds =40v,i d =0.5a 1 v ds =600v,v gs =0v i dss drain-to-source leakage current 10 a v ds =480v,v gs =0v,t j =150 ? c gate-to-source forward leakage 100 v gs =20v i gss gate-to-source reverse leakage -100 na v gs =-20v q g total gate charge 4.8 6.2 q gs gate-to-source charge 0.7 q gd gate-to-drain("miller") charge 2.7 nc i d =1.1a v ds =480v v gs =10v see t d(on) turn-on delay time 7 24 t r rise time 21 52 t d(off) turn-off delay time 13 36 t f fall time 27 64 ns v dd =300v i d =1.1a r g =25 ? l d internal drain inductance 4.5 l s internal source inductance 7.5 nh between lead, 6mm(0.25in.) from package and center of die contact c iss input capacitance 130 170 c oss output capacitance 19 25 c rss reverse transfer capacitance 3.5 4.5 pf v gs =0v v ds =25v f =1.0mh z source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current . (body diode) 1 i sm pulsed source current . (body diode) 4 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.4 v t j =25 ? c,i s =0.5a,v gs =0v t rr reverse recovery time 190 ns q rr reverse recovery charge 0.53 nc t j =25 ? c,i f =1.1a di/dt=100a/ s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + l d ) notes: repetitive rating;pulse width limited by i sd 1.1a,di/dt 200a/ s,v dd v (br)dss , max.junction temperature(see figure 11) tj 25 ? c l = 59mh, ias =1.1 a, vdd = 50v, pulse width 300 s; duty cycle 2% rg = 25 , starting tj = 25c 2
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